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| 型號： | EN29LV800B90SP |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 8兆位（1024K × 8位/為512k × 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁數(shù)： | 31/43頁 |
| 文件大?。?/td> | 239K |
| 代理商： | EN29LV800B90SP |
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EN29LV800
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
31
Rev 0.4 Release Date: 2002/01/29
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Limits
Max
Parameter
Typ
Unit
Comments
Sector Erase Time
0.5
2
sec
Chip Erase Time
8
sec
Excludes 00H programming prior
to erasure
Byte Programming Time
8
200
μs
Word Programming Time
8
200
μs
Byte
6.2
18
Chip Programming
Time
Word
3.1
9
sec
Excludes system level overhead
Erase/Program Endurance
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Input voltage with respect to V
ss
on all pins except I/O pins
(including A9, Reset and
OE
)
100K
cycles
Minimum 100K cycles
(preliminary)
Min
Max
-1.0 V
12.0 V
Input voltage with respect to V
ss
on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note :
These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 14. 32-PIN TSOP PIN CAPA
CITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
C
IN
Input Capacitance
Test Setup
V
IN
= 0
Typ
Max
Unit
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Table 15. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
Minimum Pattern Data Retention Time
125°C
20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV800B90T | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800B90TI | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800B90TIP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800B90TP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV800T70RS | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
| EN2-B1H1S | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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