參數(shù)資料
型號(hào)： EN29LV800B90TI
廠商： Electronic Theatre Controls, Inc.
英文描述： 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述： 8兆位（1024K × 8位/為512k × 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只
文件頁(yè)數(shù)： 16/43頁(yè)
文件大?。?/td> 239K
代理商： EN29LV800B90TI
EN29LV800
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
16
Rev 0.4 Release Date: 2002/01/29
Reading Toggle Bits DQ6/DQ2
Refer to Flowchart 6 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7
–DQ0 at least twice in a row to determine whether a toggle bit is toggling.
Typically, a system would note and store the value of the toggle bit after the first read. After the second
read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not
toggling, the device has completed the program or erase operation. The system can read array data on
DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped
toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully
completed the program or erase operation. If it is still toggling, the device did not complete the operation
successfully, and the system must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read
cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to
perform other system tasks. In this case, the system must start at the beginning of the algorithm when it
returns to determine the status of the operation (top of Flowchart 6).
Write Operation Status
Operation
DQ7
DQ6
DQ5
DQ3
DQ2
RY/BY
#
Embedded Program
Algorithm
Embedded Erase Algorithm
DQ7#
Toggle
0
N/A
No
toggle
Toggle
0
Standard
Mode
0
Toggle
0
1
0
Reading within Erase
Suspended Sector
Reading within Non-Erase
Suspended Sector
Erase-Suspend Program
1
No
Toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
Erase
Suspend
Mode
DQ7#
Toggle
0
N/A
N/A
0
相關(guān)PDF資料
PDF描述
EN29LV800B90TIP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800B90TP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800T70RS 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800T70RSI 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800T70RSIP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN29LV800BB-70TCP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash
EN29LV800CT-70TIP 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash
EN29SL400B-90BIP 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash
EN2-B1H1 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays
EN2-B1H1S 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*