參數(shù)資料
型號(hào): EPC8QI100
廠商: Altera
文件頁(yè)數(shù): 25/36頁(yè)
文件大?。?/td> 0K
描述: IC CONFIG DEVICE 8MBIT 100-PQFP
產(chǎn)品培訓(xùn)模塊: Three Reasons to Use FPGA's in Industrial Designs
標(biāo)準(zhǔn)包裝: 66
系列: EPC
可編程類(lèi)型: 系統(tǒng)內(nèi)可編程
存儲(chǔ)容量: 8Mb
電源電壓: 3 V ~ 3.6 V
工作溫度: -40°C ~ 85°C
封裝/外殼: 100-BQFP
供應(yīng)商設(shè)備封裝: 100-PQFP(14x20)
包裝: 托盤(pán)
產(chǎn)品目錄頁(yè)面: 604 (CN2011-ZH PDF)
其它名稱(chēng): 544-1239
Operating Conditions
Page 31
Enhanced Configuration (EPC) Devices Datasheet
January 2012
Altera Corporation
Operating Conditions
Table 15 through Table 19 list information about absolute maximum ratings,
recommended operating conditions, DC operating conditions, supply current values,
and pin capacitance data for the EPC devices.
Table 15. Absolute Maximum Rating for EPC Devices
Symbol
Parameter
Condition
Min
Max
Unit
VCC
Supply voltage
With respect to ground
-0.2
4.6
V
VI
DC input voltage
With respect to ground
-0.5
3.6
V
IMAX
DC VCC or ground current
100
mA
IOUT
DC output current, per pin
-25
25
mA
PD
Power dissipation
360
mW
TSTG
Storage temperature
No bias
-65
150
C
TAMB
Ambient temperature
Under bias
-65
135
C
TJ
Junction temperature
Under bias
135
C
Table 16. Recommended Operating Conditions for EPC Devices
Symbol
Parameter
Condition
Min
Max
Unit
VCC
Supplies voltage for 3.3-V operation
3.0
3.6
V
VI
Input voltage
With respect to ground
–0.3
VCC + 0.3
V
VO
Output voltage
0
VCC
V
TA
Operating temperature
For commercial use
0
70
C
For industrial use
–40
85
C
For military use (1)
–55
125
C
TR
Input rise time
20
ns
TF
Input fall time
20
ns
Note to Table 16:
(1) Applicable for UBGA88 package of the EPC16 device only.
Table 17. DC Operating Conditions for EPC Devices
Symbol
Parameter
Condition
Min
Typ
Max
Unit
VCC
Supplies voltage to core
3.0
3.3
3.6
V
VIH
High-level input voltage
2.0
VCC + 0.3
V
VIL
Low-level input voltage
0.8
V
VOH
3.3-V mode high-level TTL output
voltage
IOH = –4 mA
2.4
V
3.3-V mode high-level CMOS
output voltage
IOH = –0.1 mA
VCC – 0.2
V
VOL
Low-level output voltage TTL
IOL = –4 mA DC
0.45
V
Low-level output voltage CMOS
IOL = –0.1 mA DC
0.2
V
II
Input leakage current
VI = VCC or ground
–10
10
A
IOZ
Tri-state output off-state current
VO = VCC or ground
–10
10
A
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