VDD = 2.7 V to 3.6 V, GND = 0 V, T
參數(shù)資料
型號(hào)： EVAL-ADG790EBZ
廠商： Analog Devices Inc
文件頁(yè)數(shù)： 14/20頁(yè)
文件大小： 0K
描述： BOARD EVALUATION ADG790
標(biāo)準(zhǔn)包裝： 1
主要目的： 接口，交叉點(diǎn)開(kāi)關(guān)/多路復(fù)用器
已用 IC / 零件： ADG790
已供物品： 板
相關(guān)產(chǎn)品： ADG790BCBZ-REELTR-ND - IC MULTIPLEXER QUAD 30WLCSP
ADG790
Rev. A | Page 3 of 20
SPECIFICATIONS
VDD = 2.7 V to 3.6 V, GND = 0 V, TA = 40°C to +85°C, all switch sections unless otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ1
Max
Unit
ANALOG SWITCH
Analog Signal Range
0
VDD
V
On Resistance
RON
VDD = 2.7 V, VS = 0 V to VDD, IDS = 10 mA (see Figure 18)
Wide bandwidth section2
5.9
8.8
Ω
Low distortion section3
3.9
5.5
Ω
On Resistance Flatness
RFLAT(ON)
VDD = 2.7 V, VS = 0 V to VDD, IDS = 10 mA (see Figure 18)
Wide bandwidth section2
2.0
3.6
Ω
Low distortion section3
0.74
1.6
Ω
On Resistance Matching
Between Channels4
RON
VDD = 2.7 V, VS = 0 V to VDD, IDS = 10 mA
Wide bandwidth section2
0.52
Ω
Low distortion section3 (SPDT)
0.1
Ω
Low distortion section3 (4:1 multiplexers)
0.3
Ω
LEAKAGE CURRENTS
Source Off Leakage
IS (Off )
VDD = 3.6 V, VS = 0 V or 3.6 V, VD = 3.6 V or 0 V
(see Figure 19)
±10
nA
Channel On Leakage
ID, IS (On)
VDD = 3.6 V, VS = VD = 0 V or 3.6 V (see Figure 20)
±10
nA
DIGITAL INPUTS (IN1, IN2, IN3, S/D)
Input High Voltage
VINH
2.0
V
Input Low Voltage
VINL
0.8
V
Input High/Input Low Current5
IINL, IINH
VIN = VINL or VINH
±0.005
±0.1
μA
Digital Input Capacitance
CIN
6
pF
DYNAMIC CHARACTERISTICS5
tON
RL = 50 Ω, CL = 35 pF, VS = VDD/2 or 0 V (see Figure 24)
20
32
ns
tOFF
RL = 50 Ω, CL = 35 pF, VS = VDD/2 or 0 V (see Figure 24)
9
15
ns
Propagation Delay
tD
RL = 50 Ω, CL = 35 pF
Wide bandwidth section2
0.3
0.46
ns
Low distortion section3 (SPDT)
0.65
0.95
ns
Low distortion section3 (4:1 multiplexers)
0.4
0.65
ns
Propagation Delay Skew
tSKEW
RL = 50 Ω, CL = 35 pF
Wide bandwidth section2
20
ps
Low distortion section3 (4:1 multiplexers)
40
ps
Break-Before-Make Time Delay
tBBM
RL = 50 Ω, CL = 35 pF, VS1 = VS2 = VDD/2 (see Figure 25)
5
11
ns
Charge Injection
QINJ
VS = 0 V, RS = 0 Ω, CL = 1 nF (see Figure 26)
Wide bandwidth section2
0.57
pC
Low distortion section3
6.2
pC
Off Isolation
RL = 50 Ω, CL = 5 pF, f = 1 MHz (see Figure 21)
74
dB
Channel-to-Channel Crosstalk
RL = 50 Ω, CL = 5 pF, f = 1 MHz (see Figure 22)
–77
dB
Total Harmonic Distortion
THD + N
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p
Wide bandwidth section2
1.2
%
Low distortion section3
0.65
%
3 dB Bandwidth
RL = 50 Ω, CL = 5 pF (see Figure 23)
Wide bandwidth section2
550
MHz
Low distortion section3 (SPDT)
230
MHz
Low distortion section3 (4:1 multiplexers)
160
MHz
Differential Gain Error
CCIR330 test signal
Wide bandwidth section2
0.07
%
Low distortion section3 (SPDT)
0.08
%
Low distortion section3 (4:1 multiplexers)
0.18
%
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