VS
參數(shù)資料
型號(hào): EVAL-ADG888EBZ
廠商: Analog Devices Inc
文件頁(yè)數(shù): 14/16頁(yè)
文件大小: 0K
描述: BOARD EVAL FOR ADG888
標(biāo)準(zhǔn)包裝: 1
系列: *
ADG888
Rev. A | Page 7 of 16
TYPICAL PERFORMANCE CHARACTERISTICS
0.40
0
05
05
43
2-
00
5
VS, VD (V)
R
ON
(
Ω)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
1
2
34
VDD = 4.2V
VDD = 4.5V
VDD = 5.5V
VDD = 5V
TA = 25°C
IDS = 100mA
Figure 5. On Resistance vs. VD (VS), VDD = 4.2 V to 5.5 V
0.6
0
05
43
2-
00
6
VS,VD (V)
R
ON
(
Ω)
0.5
0.4
0.3
0.2
0.1
0.5
1.0
1.5
3.5
2.0
2.5
3.0
TA = 25°C
IDS = 100mA
VDD = 3V
VDD = 2.7V
VDD = 3.3V
VDD = 3.6V
Figure 6. On Resistance vs. VD (VS), VDD = 2.7 V to 3.6 V
0.45
0
05.0
05
43
2-
00
7
VS, VD (V)
R
ON
(
Ω
)
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VDD = 5V
IDS = 100mA
TA = +125°C
TA = +85°C
TA = +25°C
TA = –40°C
Figure 7. On Resistance vs. VD (VS) for Different
Temperatures, VDD = 5 V
0.7
0
3.0
05
43
2-
00
8
VS, VD (V)
R
ON
(
Ω
)
0.6
0.5
0.4
0.3
0.2
0.1
0.5
1.0
1.5
2.0
2.5
TA = +125°C
TA = +85°C
TA = +25°C
TA = –40°C
VDD = 3V
IDS = 100mA
Figure 8. On Resistance vs. VD (VS) for Different
Temperatures, VDD = 3 V
0
50
100
150
200
250
300
350
400
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VD (V)
Q
IN
J
(pC
)
TA = 25°C
VDD = 5V
VDD = 3V
05
43
2-
0
09
Figure 9. Charge Injection vs. Source Voltage
0
5
10
15
20
25
30
35
40
45
–40
–20
0
20
40
60
80
100
120
tON
tOFF
TEMPERATURE (°C)
TI
M
E
(
n
s
)
05
43
2-
0
10
VDD = 3V; SxB CHANNELS
VDD = 3V; SxA CHANNELS
VDD = 5V; SxB CHANNELS
VDD = 5V; SxA CHANNELS
VDD = 3V, 5V; SxB CHANNELS
VDD = 3V, 5V; SxA CHANNELS
Figure 10. tON/tOFF Times vs. Temperature
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