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參數(shù)資料
| 型號： | FCX591 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR |
| 中文描述： | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 21K |
| 代理商： | FCX591 |
SOT89 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
%
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
P1
FCX491
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
-80
V
Collector-Emitter Voltage
-60
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
-1
A
Base Current
-200
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
1
W
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
I
C
=-100
μ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
μ
A, I
C
=0
V
CB
=-60V
V
CES
=-60V
Breakdown Voltages
V
(BR)CBO
-80
V
V
(BR)CEO
V
(BR)EBO
-60
V
-5
V
Collector Cut-Off Current
I
CBO
I
CES
-100
nA
Collector -Emitter Cut-Off
Current
-100
nA
Emitter Cut-Off Current
I
EBO
V
CE(sat)
-100
nA
V
EB
=-4V, I
C
=0
I
C
=-500mA,
I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, V
CE
=-5V*
I
C
=-1mA, V
=-5V*
I
C
=-500mA, V
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
I
=-50mA, V
CE
=-10V
f=100MHz
Saturation Voltages
-0.3
-0.6
V
V
V
BE(sat)
V
BE(on)
h
FE
-1.2
V
Base-Emitter Turn-on Voltage
-1.0
V
Static Forward Current Transfer
Ratio
100
100
80
15
300
Transition Frequency
f
T
150
MHz
Output Capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
For typical Characteristics graphs see FMMT591 datasheet
FCX591
3 - 92
C
C
B
E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FCX591A | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| FCX591ATA | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX591TA | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX593 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| FCX593_06 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:SOT89 Silicon planar high voltage transistor |
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