參數(shù)資料
型號(hào): FCX705TA
廠商: DIODES INC
元件分類: 小信號(hào)晶體管
中文描述: 1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-89, 3 PIN
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 129K
代理商: FCX705TA
FCX705
SEMICO NDUC TORS
ISSUE 4 - DECEMBER 2002
3
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-140
V
IC= -100 A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-120
V
IC= -10mA*
Emitter-Base Breakdown Voltage
V(BR)EBO
-10
V
IE= -100 A
Collector Cut-Off Current
ICBO
-100
-10
nA
A
VCB = -10V
VCB = -120V
Tamb = 100°C
Emitter Cut-Off Current
IEBO
-0.1
A
VEB= -8V
Collector Emitter Cut-Off Current
ICES
-10
A
VCES= -120V
Collector-Emitter Saturation
Voltage
VCE(sat)
-1.3
-2.5
V
IC= -1A, IB= -1mA*
IC= -2A, IB= -2mA*
Base-Emitter Saturation Voltage
VBE(sat)
-1.8
V
IC= -1A, IB= -1mA*
Base-Emitter Turn-On Voltage
VBE(on)
-1.7
V
IC= -1A, VCE= -5V*
Static Forward Current Transfer
Ratio
hFE
3K
2K
30K
IC= -10mA, VCE= -5V*
IC= -100mA, VCE= -5V*
IC= -1A, VCE= -5V*
IC= -2A, VCE= -5V*
Transition Frequency
fT
160
MHz
IC= -100mA, VCE= -10V
f= 20MHz
Input Capacitance
Cibo
90
pF
VCB= -500mV, f= 1MHz
Output Capacitance
Cobo
15
pF
VCB= -10V, f= 1MHz
Turn-On Time
t(on)
0.6
s
IC= -500mA, VCE= -10V
IB1=IB2= -0.5mA
Turn-Off Time
t(off)
0.8
s
IC= -500mA, VCE= -10V
IB1=IB2= -0.5mA
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle ≤ 2%
Nb. Spice parameter data is available upon request for this device.
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
相關(guān)PDF資料
PDF描述
FD120H03A5F SILICON, RECTIFIER DIODE
FD120W06A5R SILICON, RECTIFIER DIODE
FE-16.000MHZ-BBD00010 QUARTZ CRYSTAL RESONATOR, 16 MHz
219-FREQ1-BBD00010 QUARTZ CRYSTAL RESONATOR, 6 MHz - 8 MHz
219-FREQ3-BBD10010 QUARTZ CRYSTAL RESONATOR, 16 MHz - 50 MHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FCX717 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR
FCX717TA 功能描述:兩極晶體管 - BJT PNP Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FCX718 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR
FCX718TA 功能描述:兩極晶體管 - BJT PNP Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FCX789A 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR