參數(shù)資料
型號(hào)： FDB5800
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel Logic Level PowerTrench MOSFET
中文描述： 80 A, 60 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 249K
代理商： FDB5800
F
FDB5800 Rev. A
www.fairchildsemi.com
2
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Parameter
Ratings
60
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
< 102
o
C, V
GS
= 10V)
Continuous (T
C
< 90
o
C, V
GS
= 5V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
80
80
14
A
A
A
A
Figure 4
652
242
1.61
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
Thermal Characteristics
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 ( Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
0.62
62.5
43
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDB5800
Device
FDB5800
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 48V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 80A, V
GS
= 10V
I
D
= 80A, V
GS
= 4.5V
I
D
= 80A, V
GS
= 5V
I
D
= 80A, V
GS
= 10V,
T
J
= 175
o
C
1.0
-
-
-
-
2.5
6.0
7.2
7.0
V
r
DS(ON)
Drain to Source On Resistance
4.6
5.8
5.5
m
-
10
12.6
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
6625
628
262
1.4
104
55
6.0
18.4
12.5
20.1
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V
I
D
= 80A
I
g
= 1.0mA
135
72
-
-
-
-
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDB5800_F085 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB600 制造商:DEC 制造商全稱(chēng):DEC 功能描述:6 AMP FAST RECOVERY BRIDGE RECTIFIERS
FDB601 制造商:DEC 制造商全稱(chēng):DEC 功能描述:6 AMP FAST RECOVERY BRIDGE RECTIFIERS
FDB602 制造商:DEC 制造商全稱(chēng):DEC 功能描述:6 AMP FAST RECOVERY BRIDGE RECTIFIERS
FDB6021P 功能描述:MOSFET P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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