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參數(shù)資料
| 型號(hào)： | FDB5800 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 80 A, 60 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 249K |
| 代理商： | FDB5800 |
F
FDB5800 Rev. A
www.fairchildsemi.com
5
Figure 5.
1
10
100
1000
1
10
100
0.1
DC
100ms
10ms
1ms
100
μ
s
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
10
μ
s
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
C
Forward Bias Safe Operating Area
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6.
Unclamped Inductive Switching
Capability
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
500
100
10
1
0.01
0.1
1
10
100
1000
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
Figure 7.
0
2
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
1
3
4
40
60
100
160
0
I
D
,
140
120
80
20
T
A
= 125
o
C
V
DS
= 6V
T
A
= 25
o
C
T
A
= -55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Transfer Characteristics
Figure 8. Saturation Characteristics
0
1.0
2.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
40
60
100
160
0
I
D
,
140
120
80
20
0.5
1.5
4.5V
3.0V
4.0V
3.5V
10V
5.0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Figure 9.
2
6
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
8
0.006
0.008
0.012
0.002
R
D
,
0.016
0.014
0.010
0.004
I
D
= 20A
T
A
= 175
o
C
T
A
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
On-Resistance Variation vs Gate-to-
Source Voltage
Figure 10.
Resistance vs Junction Temperature
- 80
40
160
T
J
, AMBIENT TEMPERATURE (
o
C)
0
- 40
80
120
1.0
1.2
1.6
0.6
N
D
2.0
1.8
1.4
0.8
200
2.2
I
D
= 80A
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Normalized Drain to Source On
Typical Characteristics
T
C
= 25°C unless otherwise noted
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相關(guān)代理商/技術(shù)參數(shù) |
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| FDB5800_F085 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB600 | 制造商:DEC 制造商全稱:DEC 功能描述:6 AMP FAST RECOVERY BRIDGE RECTIFIERS |
| FDB601 | 制造商:DEC 制造商全稱:DEC 功能描述:6 AMP FAST RECOVERY BRIDGE RECTIFIERS |
| FDB602 | 制造商:DEC 制造商全稱:DEC 功能描述:6 AMP FAST RECOVERY BRIDGE RECTIFIERS |
| FDB6021P | 功能描述:MOSFET P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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