參數(shù)資料
型號： FDFMA2N028Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Integrated N-Channel PowerTrench MOSFET and Schottky Diode
中文描述： 3700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： 2 X 2 MM, 0.8 MM HEIGHT, ROHS COMPLIANT, MICROFET-6
文件頁數(shù)： 4/8頁
文件大小： 360K
代理商： FDFMA2N028Z
F
FDFMA2N028Z Rev.B
www.fairchildsemi.com
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
V
GS
=
3.0V
V
GS
=
1.5V
V
GS
=
4.5V
V
GS
=
2.5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2%MAX
V
GS
=
2.0V
I
D
,
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
1
2
3
4
5
6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
GS
= 3.0V
V
GS
= 4.5V
V
GS
= 2.0V
PULSE DURATION = 300
μ
s
DUTY CYCLE =2%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 2.5V
V
GS
= 3.5V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 3.7A
V
GS
= 4.5V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
0
2
4
6
8
10
25
50
75
100
125
150
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 1.85A
r
D
,
S
(
m
Ω
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
V
DD
=5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0001
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
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相關代理商/技術參數(shù)
參數(shù)描述
FDFMA2N028Z_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ
FDFMA2P029Z 功能描述:MOSFET -20V P-Channel PT MFET_SCHOTTKY RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFMA2P029Z_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.1A, 95m
FDFMA2P853 功能描述:MOSFET MLP 2X2 DUAL INTEGRATED PCH PO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFMA2P853_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
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