參數(shù)資料
型號(hào)： FDFMA2P857
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.0A, 120mohm
中文描述： 3 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, 2 X 2 MM, 0.80 MM HEIGHT, MICROFET-8
文件頁數(shù)： 4/8頁
文件大?。?/td> 366K
代理商： FDFMA2P857
F
FDFMA2P857 Rev.B
www.fairchildsemi.com
4
Typical Characteristics
T
A
= 25°C unless otherwise noted
Figure 1.
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
V
GS
=-4.5V
-3.5V
-3V
-2.5V
-2V
-1.8V
-1.5V
-
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
1
2
3
4
5
6
0.5
1.0
1.5
2.0
2.5
3.0
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.8V
V
GS
=-1.5V
N
D
-I
D
, DRAIN CURRENT(A)
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
I
D
=-3A
V
GS
= -4.5V
R
D
,
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
0
2
4
6
8
10
0.04
0.10
0.16
0.22
0.28
T
A
= 125
o
C
T
A
= 25
o
C
I
D
=-1.5A
r
D
,
S
(
O
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.0
0.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
V
DS
= -5V
-55
o
C
25
o
C
T
A
= 125
o
C
-
I
D
,
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0001
0.001
0.01
0.1
1
10
-55
o
C
25
o
C
T
A
= 125
o
C
V
GS
= 0V
-
I
S
,
-
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
相關(guān)PDF資料
PDF描述
FDFMA3N109 Integrated N-Channel PowerTrench MOSFET and Schottky Diode
FDFMC2P120 Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFS2P102 FETKEY P-Channel MOSFET with Schottky Diode
FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDFMA2P857_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
FDFMA2P859T 功能描述:MOSFET PT2 Pch 20V/8V & Schottky Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFMA3N109 功能描述:MOSFET PowerTrench MOSFET and Schottky Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFMA3N109_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode
FDFMA3P029Z 功能描述:MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*