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參數(shù)資料
| 型號(hào)： | FDG6306P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | CAP CER 15000PF 250V X7R 1206 |
| 中文描述： | 600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | FDG6306P |
FDG6306P Rev C (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current V
DS
= –16 V, V
GS
= 0 V
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A
–20
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–14
mV/
°
C
–1
–100
100
μ
A
nA
nA
V
GS
= –12 V, V
DS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –4.5 V, I
D
= –0.6 A
V
GS
= –2.5 V, I
D
= –0.5 A
V
GS
= –4.5 V, I
D
= –0.6 A, T
J
=125°C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V, I
D
= –0.6 A
I
D
= –250
μ
A
–0.6
–1.2
3
–1.5
V
Gate Threshold Voltage
mV/
°
C
300
470
400
1.8
420
630
700
M
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–2
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
114
24
9
pF
pF
pF
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
5.5
14
6
1.7
1.4
0.3
0.4
11
25
12
3.4
2.0
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V, I
D
= 1 A,
V
GS
= –4.5 V, R
GEN
= 6
V
DS
= –10 V, I
D
= –0.6 A,
V
GS
= –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–0.25
–1.2
A
V
V
GS
= 0 V,
I
S
= –0.25 A
(Note 2)
–0.77
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design. R
θ
JA
= 415°C/W when mounted on a minimum pad .
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDG6306P_D87Z | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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