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參數(shù)資料
| 型號： | FDG6316 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | P溝道MOSFET的1.8指定的PowerTrench |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 149K |
| 代理商： | FDG6316 |
FDG6316P Rev D (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
DS
= –10 V,
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A
–12
V
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
I
D
= –250
μ
A, Referenced to 25
°
C
–3.7
mV/
°
C
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
–100
100
μ
A
nA
nA
V
GS
= –8 V,
V
GS
= 8 V,
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –4.5 V, I
D
= –0.7 A
V
GS
= –2.5 V, I
D
= –0.5 A
V
GS
= –1.8 V, I
= –0.4 A
V
GS
= –4.5 V, I
D
= –0.7 A, T
J
=125°C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V,
I
D
= –0.7 A
I
D
= –250
μ
A
–0.4
–0.6
2
–1.5
V
mV/
°
C
221
297
427
250
2.5
270
360
650
348
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–1.8
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
146
60
48
pF
pF
pF
V
DS
= –6 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
5
13
8
2
1.7
0.3
0.4
10
23
16
4
2.4
ns
ns
ns
ns
nC
nC
nC
V
DD
= –6 V,
V
GS
= –4.5 V, R
GEN
= 6
I
D
= 1 A,
V
DS
= –6 V,
V
GS
= –4.5 V
I
D
= –0.7 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–0.25
–1.2
A
V
V
GS
= 0 V,
I
S
= –0.25 A
(Note 2)
–0.7
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design. R
θ
JA
= 415°C/W when mounted on a minimum pad of FR-4
PCB on still air environment
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDG6316P | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6316P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG6316P_G | 制造商:Fairchild 功能描述:DUAL MOSFEL -12V/0.7A , SC70 |
| FDG6316P_Q | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6317NZ | 功能描述:MOSFET Dual 20V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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