- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375774 > FDG6320C (FAIRCHILD SEMICONDUCTOR CORP) Tantalum Molded Capacitor; Capacitance: 15uF; Voltage: 6.3V; Case Size: 3.8x6.5 mm; Packaging: Tape & Reel PDF資料下載
參數(shù)資料
| 型號： | FDG6320C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Tantalum Molded Capacitor; Capacitance: 15uF; Voltage: 6.3V; Case Size: 3.8x6.5 mm; Packaging: Tape & Reel |
| 中文描述： | 220 mA, 25 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 196K |
| 代理商： | FDG6320C |
November 1998
FDG6320C
Dual N & P Channel Digital FET
General Description
Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
N-Channel
P-Channel
Units
V
DS
S
V
GSS
I
D
Drain-Source Voltage
25
-25
V
Gate-Source Voltage
8
-8
V
Drain Current - Continuous
0.22
-0.14
A
- Pulsed
0.65
-0.4
P
D
T
J
,T
STG
ESD
Maximum Power Dissipation
(Note 1)
0.3
W
Operating and Storage Temperature Ranger
-55 to 150
°C
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6
kV
THERMAL CHARACTERISTICS
R
θ
J A
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°C/W
FDG6320C Rev. D
N-Ch 0.22 A, 25 V, R
DS(ON)
= 4.0
@ V
GS
= 4.5 V,
R
DS(ON)
= 5.0
@ V
GS
= 2.7 V.
P-Ch -0.14 A, -25V, R
DS(ON)
= 10
@ V
GS
= -4.5V,
R
DS(ON)
= 13
@ V
GS
= -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V
GS(th)
< 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
These dual N & P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. This device has been designed
especially for low voltage applications as a replacement for
bipolar digital transistors and small signal MOSFETS. Since
bias resistors are not required, this dual digital FET can
replace several different digital transistors, with different bias
resistor values.
SC70-6
SuperSOT
TM
-6
SOIC-14
SO-8
SOT-8
SOT-23
D1
S2
G1D2
S1
G2
SC70-6
.20
pin
1
5
3
2
4
1
6
1998 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDG6321 | Dual N & P Channel Digital FET |
| FDG6321C | Tantalum Molded Capacitor; Capacitance: 150uF; Voltage: 6.3V; Packaging: Tape & Reel |
| FDG6322C | Dual N & P Channel Digital FET |
| FDG6323 | Integrated Load Switch |
| FDG6323L | Tantalum Molded Capacitor; Capacitance: 2.2uF; Voltage: 6.3V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:25V 1/2 BR N/P 4/10 O SC70-6 |
| FDG6320C_D87Z | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6321 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET |
| FDG6321C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。