參數(shù)資料
型號: FDG6342L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 外設及接口
英文描述: Integrated Load Switch
中文描述: BUF OR INV BASED PRPHL DRVR, PDSO6
封裝: ROHS COMPLIANT, SC-70, 6 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 190K
代理商: FDG6342L
F
www.fairchildsemi.com
2
2007 Fairchild Semiconductor Corporation
FDG6342L Rev.
B1
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
IN
I
Load
I
FL
I
RL
V
IN
Breakdown Voltage
Zero Gate Voltage Drain Current
Leakage Current, Forward
Leakage Current, Reverse
I
D
= -250
μ
A, V
ON/OFF
= 0V
V
IN
= -6.4V, V
ON/OFF
= 0V
V
IN
= 8V, V
ON/OFF
= 0V
V
IN
= -8V, V
ON/OFF
= 0V
8
V
μ
A
μ
A
μ
A
–1
10
–10
On Characteristics
V
ON/OFF(th)
Gate Threshold Voltage
V
IN
= V
ON/OFF
, I
D
= -250
μ
A
V
IN
= 4.5V, I
D
= –1.5A
V
IN
= 2.5V, I
D
= –1.3A
V
IN
= 1.8V, I
D
= –1.1A
V
IN
= 1.5V, I
D
= –0.9A
V
IN
= 4.5V, I
D
= 0.4A
V
IN
= 2.7V, I
D
= 0.2A
0.65
0.8
125
150
200
250
2.6
3.3
1.5
150
195
280
480
4.0
5.0
V
r
DS(on)
Static Drain to Source On Resistance (Q2)
m
Static Drain to Source On Resistance (Q1)
(note 2)
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
V
SD
Source to Drain Diode Forward Voltage
–0.25
–1.2
V
V
V
ON/OFF
= 0V, I
S
= –0.25A (Note 2)
–0.6
NOTES:
1. R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is
guaranteed by design while R
θ
JA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
FDG6342LLoad Switch Application circuit
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030
IN
C1
Q1
OUT
Q2
R1
R2
ON/OFF
LOAD
a. 350°C/W when mounted on a
1 in
pad of 2 oz copper .
b. 415°C/W when mounted on
a minimum pad of 2 oz copper.
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