參數(shù)資料
型號： FDH20N40
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 20 AMP MINIATURE POWER RELAY
中文描述： 20 A, 400 V, 0.216 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 188K
代理商： FDH20N40
2002 Fairchild Semiconductor Corporation
FDH20N40 / FDP20N40 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25
°
C (unless otherwise noted)
Statics
B
VDSS
Dynamics
g
fs
Q
g(TOT)
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
Avalanche Characteristics
E
AS
Single Pulse Avalanche Energy (Note 2)
I
AR
Avalanche Current
Drain-Source Diode Characteristics
Continuous Source Current
(Body Diode)
Pulsed Source Current (Note 1)
(Body Diode)
V
SD
Source to Drain Diode Voltage
t
rr
Reverse Recovery Time
Q
RR
Reverse Recovered Charge
Notes:
1:
Repetitive rating; pulse width limited by maximum junction temperature
2:
Starting T
J
= 25
°
C, L = 5.5mH, I
AS
= 20A
Device Marking
FDH20N40
FDP20N40
Device
FDH20N40
FDP20N40
Package
TO-247
TO-220
Reel Size
Tube
Tube
Tape Width
-
-
Quantity
30
50
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V/
°
C Reference to 25
°
C
I
D
= 1mA
V
GS
= 10V, I
D
= 10A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 400V
V
GS
= 0V
V
GS
= ±20V
400
-
-
V
B
VDSS
/
T
J
Breakdown Voltage Temp. Coefficient
-
0.43
-
r
DS(ON)
V
GS(th)
Drain to Source On-Resistance
Gate Threshold Voltage
-
0.200
3.5
-
-
-
0.216
4.0
25
250
±100
V
2.0
-
-
-
I
DSS
Zero Gate Voltage Drain Current
T
C
= 25
o
C
T
C
=150
o
C
μA
I
GSS
Gate to Source Leakage Current
nA
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain
“
Miller
”
Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 50V, I
D
= 10A
V
GS
= 10V
V
DS
= 320V
I
D
= 20A
10
-
-
-
-
-
-
-
-
-
-
-
-
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
35
10
12
12.4
32.5
30
34
1840
245
18
42
12
14.4
-
-
-
-
-
-
-
V
DD
= 200V
I
D
= 20A
R
G
= 10
R
D
= 15.4
V
DS
= 25V, V
GS
= 0V
f = 1MHz
1100
-
-
-
-
mJ
A
20
I
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
SD
= 20A
I
SD
= 20A, dI
SD
/dt = 100A/μs
I
SD
= 20A, dI
SD
/dt = 100A/μs
-
-
20
A
I
SM
-
-
80
A
-
-
-
0.9
351
4.5
1.2
456
5.85
V
ns
μC
D
G
S
相關(guān)PDF資料
PDF描述
FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET
FDH27N50 Power Inductor; Inductor Type:Power; Inductance:330uH; Inductance Tolerance:+/- 30 %; Series:CD; DC Resistance Max:1090mohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:0.72A; Leaded Process Compatible:Yes RoHS Compliant: Yes
FDH300 High Conductance Low Leakage Diodes
FDLL333 High Conductance Low Leakage Diodes
FDLL300 High Conductance Low Leakage Diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDH20SG 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:.050 IDC CONNECTORS DUAL ROW SOCKETS & TRANSITION PLUGS
FDH20T 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:.050 IDC CONNECTORS DUAL ROW SOCKETS & TRANSITION PLUGS
FDH-20-T 功能描述:集管和線殼 20 pos. IDC FOUR ROW TRANSITION PLUG RoHS:否 產(chǎn)品種類:1.0MM Rectangular Connectors 產(chǎn)品類型:Headers - Pin Strip 系列:DF50 觸點類型:Pin (Male) 節(jié)距:1 mm 位置/觸點數(shù)量:16 排數(shù):1 安裝風(fēng)格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點材料:Brass 觸點電鍍:Gold 制造商:Hirose Connector
FDH210N08 功能描述:MOSFET 75V, 210A NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FD-H25-L43 制造商:PANASONIC INDUSTRIAL AUTOMATION SALES 功能描述:HEAT-RESISTANT SENSING 4-20MM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*