參數(shù)資料
型號(hào)： FDH20N40
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 20 AMP MINIATURE POWER RELAY
中文描述： 20 A, 400 V, 0.216 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 3/6頁
文件大?。?/td> 188K
代理商： FDH20N40
2002 Fairchild Semiconductor Corporation
FDH20N40 / FDP20N40 Rev. A
F
Typical Characteristics
Figure 1.
Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperatrue
Figure 5. Capacitance vs Drain To Source Voltage
Figure 6. Gate Charge Waveforms For Constant
Gate Current
1
10
100
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
C
= 25
o
C
V
GS
DESCENDING
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
10V
7V
6.5V
6V
5.5V
5V
1
10
100
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
μ
s
PULSE DURATION = 80
T
C
= 175
o
C
V
GS
DESCENDING
10V
7V
6.5V
6V
5.5V
5V
0
2.5
10
20
30
40
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 50V
T
J
= 175
o
C
T
J
= 25
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125
150
175
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= 10V, I
D
= 10A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1
10
100
1000
1
10
100
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
OSS
C
ISS
C
RSS
0
5
10
15
0
10
20
30
40
50
60
80V
V
G
,
Q
g
, GATE CHARGE (nC)
I
D
= 20A
200V
320V
相關(guān)PDF資料
PDF描述
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