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參數(shù)資料
| 型號： | FLL21E004ME |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | High Voltage - High Power GaAs FET |
| 中文描述： | 高電壓-高功率GaAs場效應管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 247K |
| 代理商： | FLL21E004ME |
FEATURES
High Voltage Operation : VDS=28V
High Power : P1dB=36dBm(typ.) at f=2.17GHz
High Gain: G1dB=14dB(typ.) at f=2.17GHz
Broad Frequency Range : 2100 to 2200MHz
Proven Reliability
DESCRIPTION
The FLL21E004ME is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated amplification. This product is
ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers
while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS
Item Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature T
stg
Channel Temperature T
ch
Condition
Rating Unit
32 V
V
DS
V
GS
Tc=25
o
C -3 V
P
t
18.75 W
-65 to +175
200
o
C
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Symbol Condition
Limit
Unit
min. Typ. Max.
Pinch-Off Voltage
V
p
V
DS
=5V I
DS
=0.6mA -0.1 -0.2
-0.5
V
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-6uA
-5 -
-
V
Output Power at 1dB G.C.P.
P1dB V
DS
=28V f=2.17GHz 35.0 36.0 -
dBm
Power Gain at 1dB G.C.P. G
1dB
I
DS(DC)
=50mA
13.0 14.0 -
dB
Drain Efficiency
η
d
-
40 -
%
Thermal Resistance R
th
Channel to Case -
7.0 8.0
o
C
G.C.P.:Gain Compression Point
Edition 1.4
Mar. 2004
1
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Item Symbol Condition
DC Input Voltage
V
DS
Forward Gate Current I
GF
Reverse Gate Current I
GR
Channel Temperature
T
ch
Limit
<28 V
<6.1 mA
>-1.0 mA
155
o
C
Unit
R
G
=100
R
G
=100
FLL21E004ME
High Voltage - High Power GaAs FET
相關PDF資料 |
PDF描述 |
|---|---|
| FLL21E010MK | High Voltage - High Power GaAs FET |
| FLL21E040IK | High Voltage - High Power GaAs FET |
| FLL21E045IY | L,S-band High Power GaAs FET |
| FLL21E060IY | L,S-band High Power GaAs FET |
| FLL21E090IK | High Voltage - High Power GaAs FET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FLL21E010MK | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:High Voltage - High Power GaAs FET |
| FLL21E040IK | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:High Voltage - High Power GaAs FET |
| FLL21E045IY | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L,S-band High Power GaAs FET |
| FLL21E060IY | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L,S-band High Power GaAs FET |
| FLL21E090IK | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:High Voltage - High Power GaAs FET |
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