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參數(shù)資料
| 型號： | FLL21E090IK |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | High Voltage - High Power GaAs FET |
| 中文描述： | 高電壓-高功率GaAs場效應管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 333K |
| 代理商： | FLL21E090IK |
FEATURES
High Voltage Operation : VDS=28V
High Gain: 15dB(typ.) at Pout=43dBm(Avg.)
Broad Frequency Range : 2100 to 2200MHz
Proven Reliability
DESCRIPTION
The FLL21E090IK is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA base station amplifiers while
offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS
Item Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature T
stg
Channel Temperature T
ch
Condition
Rating Unit
32 V
V
DS
V
GS
Tc=25
o
C
-3 V
P
t
125 W
-65 to +175
200
o
C
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Symbol Condition
Limit
Unit
min. Typ. Max.
Pinch-Off Voltage
V
p
V
DS
=5V, I
DS
=150mA -0.1 -0.2
-0.5
V
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-1.5mA
-5
V
3rd Order Inter modulation Distortion
IM
3
V
DS
=28V -
-35 -30 dBc
Power Gain
Gp
η
d
I
DS(DC)
=700mA 14.0 15.0 -
dB
Drain Efficiency
Pout=43dBm(Avg.) -
26 -
%
Adjacent Channel Leakage Power Ratio ACLR note -
-36 -
dBc
Thermal Resistance
R
th
Channel to Case
-
1.1 1.2
o
C /W
Note 1 : IM3 ACLR and Gain test condition as follows:
IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz.
ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation,
measured over 3.84MHz at fo+/5MHz.
Edition 1.2
Mar 2004
1
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item Symbol Condition
DC Input Voltage
V
DS
Forward Gate Current I
GF
Reverse Gate Current I
GR
Channel Temperature
T
ch
Limit
<28 V
<352 mA
>-31
155
o
C
Unit
R
G
=2
R
G
=2
mA
FLL21E090IK
High Voltage - High Power GaAs FET
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相關代理商/技術參數(shù) |
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|---|---|
| FLL21E090IY | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L,S-band High Power GaAs FET |
| FLL21E135IX | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L,S-band High Power GaAs FET |
| FLL21E180IU | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:High Voltage - High Power GaAs FET |
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| FLL300IL-1 | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band Medium & High Power GaAs FET |
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