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參數(shù)資料
| 型號： | FLM1414-12F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內(nèi)部匹配場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 250K |
| 代理商： | FLM1414-12F |
1
Edition 1.3
August 2004
FLM1414-12F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
57.6
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 34.0 and -5.0 mA respectively with
gate resistance of 50
.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
-
6000
9000
-
5000
-
-0.5
-1.5
-3.0
-5
-
-
4.0
5.0
-
-
23
-
39.5
40.5
-
VDS = 5V, IDS = 300mA
IGS = -340
μ
A
VDS = 5V, IDS = 3600mA
VDS = 5V, VGS = 0V
VDS =10V,
IDS = 0.6 IDSS (Typ.),
f = 14.0 ~ 14.5 GHz,
ZS = ZL= 50 ohm
mA
mS
V
dB
%
dBm
V
Vp
VGSO
P1dB
G1dB
Idsr
η
add
Drain Current
-
3600
4500
mA
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Channel to Case
Thermal Resistance
-
2.3
2.6
°
C/W
Rth
Tch
G.C.P.: Gain Compression Point
CASE STYLE:
IB
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
°
C
DESCRIPTION
The FLM1414-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in
a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB= 40.5dBm (Typ.)
High Gain: G1dB= 5.0dB (Typ.)
High PAE:
η
add= 23% (Typ.)
Broad Band: 14.0 ~ 14.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLM1414-15F | X,Ku-Band Internally Matched FET |
| FLM3135-18F | C-Band Internally Matched FET |
| FLM3439-18F | C-Band Internally Matched FET |
| FLM3439-25F | C-Band Internally Matched FET |
| FLM3439-4F | C-Band Internally Matched FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM1414-15F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 14.0 14.5GHz, 4200mA, Bulk |
| FLM1414-3F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 14.0 14.5GHz, 825mA, Bulk |
| FLM1414-4F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:Internally Matched Power GaAs FET |
| FLM1414-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 14.0 14.5GHz, 1650mA, Bulk |
| FLM1414-8C | 制造商:FUJITSU 功能描述:MESFET Transistor, N-CHAN, SOT-469AVAR |
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