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參數(shù)資料
| 型號： | FLM1414-15F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X,Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內(nèi)部匹配場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 217K |
| 代理商： | FLM1414-15F |
X,Ku-Band Internally Matched FET
FEATURES
High Output Power: P1dB=42.0dBm(Typ.)
High Gain: G1dB=6.0dB(Typ.)
High PAE:
η
add=26%(Typ.)
Broad Band: 14.0
～
14.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
DESCRIPTION
The FLM1414-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
CASE STYLE: IB
G.C.P.:Gain Compression Point , S.C.L.:Single Carrier Level
Edition 1.4
May 2004
1
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Item
Symbol
FLM1414-15F
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
Class
III
2000V
~
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
P
T
T
stg
15
-5
75
-65 to +175
V
V
W
o
C
Channel Temperature
T
ch
175
o
C
Power Gain at 1dB G.C.P.
Limit
Typ.
7.2 10.0
Item
Symbol
Test Conditions
Unit
Drain Current
Transconductance
Output Power at 1dB G.C.P.
Gain Flatness
I
DSS
g
m
V
p
P
1dB
G
IM
3
A
mS
V
V
dB
dBm
Min.
-
Max.
Drain Current
I
dsr
mA
-
6700 -
-0.5 -1.5 -3.0
-5.0 -
-
41.5 42.0 -
5.0 6.0 -
-
4200 5000
V
DS
=10V
f=14.0 - 14.5 GHz
I
DS
=0.6I
DSS
(typ)
Zs=Z
L
=50
Power-added Efficiency
η
add
%
dB
-
26 -
-
-
1.2
V
DS
=5V , V
GS
=0V
V
DS
=5V , I
DS
=3600mA
V
DS
=5V , I
DS
=300mA
I
GS
=-340
μ
A
Pinch-off Voltage
Gate-Source Breakdown Voltage
V
GSO
G
1dB
3rd Order Intermodulation
Distortion
f=14.5 GHz
Δ
f=10MHz,2-Tone Test
Pout=30.0dBm(S.C.L.)
Channel to Case
Thermal Resistance
-42.0 -45.0 -
dBc
R
th
T
ch
-
1.8 2.0
o
C /W
Channel Temperature Rise
10V x Idsr X Rth
-
-
80
o
C
Condition
Unit
DC Input Voltage
Forward Gate Current
V
DS
I
GF
≦
10
≦
48
V
mA
Limit
R
G
=50
Reverse Gate Current
I
GR
R
G
=50
≧
-6.6
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM1414-3F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 14.0 14.5GHz, 825mA, Bulk |
| FLM1414-4F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:Internally Matched Power GaAs FET |
| FLM1414-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 14.0 14.5GHz, 1650mA, Bulk |
| FLM1414-8C | 制造商:FUJITSU 功能描述:MESFET Transistor, N-CHAN, SOT-469AVAR |
| FLM1414-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 14.0 14.5GHz, 2200mA, Bulk |
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