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參數(shù)資料
| 型號(hào)： | FLU10ZM |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band Medium & High Power GaAs FET |
| 中文描述： | L波段中等 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 229K |
| 代理商： | FLU10ZM |
FLU10ZM
L-Band Medium & High Power GaAs FET
4
OUTPUT POWER & DRAIN CURRENT vs. INPUT POWER with a wide band tuning condition.
@ V
DS
= 10V, I
DS
= 150mA, V
GS
= -0.9V
0
25
50
75
P
OUTPUT POWER vs. FREQUENCY
0
25
50
75
P
0
25
50
75
P
Pin-Pout, Ids & P.A.E.@f=1.8GHz
10
15
20
25
30
35
4
6
8 10 12 14 16 18 20 22 24 26
Input Power [dBm]
O
100
140
180
220
260
300
D
Pout
Ids[mA
]
P.A.E.
Pin-Pout, Ids & P.A.E.@f=2.0GHz
10
15
20
25
30
35
4
6
8 10 12 14 16 18 20 22 24 26
Input Power [dBm]
O
100
140
180
220
260
300
D
Pout
Ids[mA]
P.A.E.
Pin-Pout, Ids & P.A.E. @f=2.2GHz
10
15
20
25
30
35
4
6
8 10 12 14 16 18 20 22 24 26
Input Power [dBm]
O
100
140
180
220
260
300
D
Pout
Ids[mA
]
P.A.E.
15
20
25
30
35
1.7
1.9
2.1
2.3
Frequency[GHz]
O
Pin=5dBm
Pin=10dBm
Pin=15dBm
P1dB
Pin=20dBm
Pin=25dBm
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