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參數(shù)資料
| 型號： | FM24CL16-G |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 4Kb FRAM Serial 3V Memory |
| 中文描述： | 4Kb的鐵電串行3V的記憶 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 90K |
| 代理商： | FM24CL16-G |
FM24CL16
Rev 2.2
July 2003
Page 7 of 13
command to be issued with the slave address set to 1.
The operation is now a current address read. This
operation is illustrated in Figure 9.
S
A
Slave Address
1
Data Byte
1
P
By Master
By FM24CL16
Start
Address
Stop
Acknowledge
No
Acknowledge
Data
Figure 7. Current Address Read
S
A
Slave Address
1
Data Byte
1
P
By Master
By FM24CL16
Start
Address
Stop
Acknowledge
No
Acknowledge
Data
Data Byte
A
Acknowledge
Figure 8. Sequential Read
S
A
Slave Address
1
Data Byte
1
P
By Master
By FM24CL16
Start
Address
Stop
No
Acknowledge
Data
Data Byte
A
Acknowledge
S
A
Slave Address
0
Word Address
A
Start
Address
Acknowledge
Figure 9. Selective (Random) Read
Endurance
A typical EEPROM has a write endurance
specification that is fixed. Surpassing the specified
level of cycles on an EEPROM usually leads to a
hard memory failure. The 24CL16 has no such
limitation.
Applications
The versatility of FRAM technology fits into many
diverse applications. Clearly the strength of higher
write endurance and faster writes make FRAM
superior
to
EEPROM
programmable applications. The advantage is most
obvious in data collection environments where writes
are frequent and data must be nonvolatile.
in
all
but
one-time
The attributes of fast writes and high write endurance
combine in many innovative ways. A short list of
ideas is provided here.
1.
Data collection. In applications where data is
collected and saved, FRAM provides a superior
alternative to other solutions. It is more cost effective
than battery backup for SRAM and provides better
write attributes than EEPROM.
2.
Configuration. Any nonvolatile memory can
retain a configuration. However, if the configuration
changes and power failure is a possibility, the higher
write endurance of FRAM allows changes to be
recorded without restriction. Any time the system
state is altered, the change can be written. This avoids
writing to memory on power down when the available
time is short and power scarce.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM24CL16-S | 4Kb FRAM Serial 3V Memory |
| FM24CL64 | 4Kb FRAM Serial 3V Memory |
| FM24CL64-S | 4Kb FRAM Serial 3V Memory |
| FM25256 | 256Kb FRAM Serial 5V Memory |
| FM25256-G | 256Kb FRAM Serial 5V Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM24CL16-GTR | 功能描述:F-RAM 16K (2Kx8) 2.7V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM24CL16-S | 功能描述:F-RAM 16K (2Kx8) 2.7V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM24CL16-STR | 功能描述:F-RAM 16K (2Kx8) 2.7V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM24CL32-G | 功能描述:F-RAM 32K (4Kx8) 3.0V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM24CL32-GTR | 功能描述:F-RAM 32K (4Kx8) 3.0V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
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