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參數(shù)資料
| 型號： | FM24CL16-G |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 4Kb FRAM Serial 3V Memory |
| 中文描述： | 4Kb的鐵電串行3V的記憶 |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 90K |
| 代理商： | FM24CL16-G |
FM24CL16
Rev 2.2
July 2003
Page 8 of 13
3.
High noise environments. Writing to EEPROM
in a noisy environment can be challenging. When
severe noise or power fluctuations are present, the
long write time of EEPROM creates a window of
vulnerability during which the write can be corrupted.
The fast write of FRAM is complete within a
microsecond. This time is typically too short for noise
or power fluctuation to disturb it.
4.
Time to market. In a complex system, multiple
software routines may need to access the nonvolatile
memory. In this environment the time delay
associated with programming EEPROM adds undue
complexity to the software development. Each
software routine must wait for complete programming
before allowing access to the next routine. When time
to market is critical, FRAM can eliminate this simple
obstacle. As soon as a write is issued to the
FM24CL16, it is effectively done -- no waiting.
5.
RF/ID. In the area of contactless memory, FRAM
provides an ideal solution. Since RF/ID memory is
powered by an RF field, the long programming time
and high current consumption needed to write
EEPROM is unattractive. FRAM provides a superior
solution. The FM24CL16 is suitable for multi-chip
RF/ID products.
6.
Maintenance tracking. In sophisticated systems,
the operating history and system state during a failure
is important knowledge. Maintenance can be
expedited when this information has been recorded.
Due to the high write endurance, FRAM makes an
ideal system log. In addition, the convenient 2-wire
interface of the FM24CL16 allows memory to be
distributed throughout the system using minimal
additional resources.
相關PDF資料 |
PDF描述 |
|---|---|
| FM24CL16-S | 4Kb FRAM Serial 3V Memory |
| FM24CL64 | 4Kb FRAM Serial 3V Memory |
| FM24CL64-S | 4Kb FRAM Serial 3V Memory |
| FM25256 | 256Kb FRAM Serial 5V Memory |
| FM25256-G | 256Kb FRAM Serial 5V Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FM24CL16-GTR | 功能描述:F-RAM 16K (2Kx8) 2.7V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM24CL16-S | 功能描述:F-RAM 16K (2Kx8) 2.7V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM24CL16-STR | 功能描述:F-RAM 16K (2Kx8) 2.7V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM24CL32-G | 功能描述:F-RAM 32K (4Kx8) 3.0V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM24CL32-GTR | 功能描述:F-RAM 32K (4Kx8) 3.0V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
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