參數(shù)資料
型號: FMA9
廠商: Rohm CO.,LTD.
英文描述: Digital transistor (Common Emitter Dual Transistors)
中文描述: 數(shù)字晶體管(共發(fā)射極雙晶體管)
文件頁數(shù): 1/2頁
文件大?。?/td> 62K
代理商: FMA9
UMA9N / FMA9A
Transistors
Digital transistor
(Common Emitter Dual Transistors)
UMA9N / FMA9N
!
Features
1) Two DTA114E chips in UMT and
SMT packages.
2) Mounting cost and area can be cut
in half.
!
Structure
Epitaxial planar type
PNP silicon transistor
(Built-in resistor type)
The following characteristics apply to
both DTr
1
and DTr
2
.
!
External dimensions
(Units : mm)
ROHM : UMT5
ROHM : SMT5
UMA9N
2.0±0.2
FMA9A
2.9±0.2
0.05
+0.1
0
2
±
0
1
±
0
0~0.1
0.15±0.05
0.2
0.9±0.1
0.7
1.3±0.1
0.65
0.65
(3)
(2)
(4)
(5)
(1)
(1)
(2)
0.3
+0.1
0.05
1
2
0
(5)
(4)
(3)
0.95 0.95
1.9±0.2
1.1 +0.2
0.1
0.8±0.1
0~0.1
0
0.15
0.06
+0.1
R
1
R
1
DTr
1
DTr
2
(3)
(4)
(5)
(2)
(1)
R
1
R
1
DTr
1
DTr
2
(3)
(2)
(1)
(4)
(5)
R
1
= 10k
R
2
= 10k
R
1
= 10k
R
2
= 10k
R
2
R
2
R
2
R
2
Abbreviated symbol: A10
All terminals have same
All terminals have same
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
Limits
Unit
V
CC
50
V
V
IN
40
V
10
I
O
50
100
mA
Tj
150
°
C
Tstg
50~+150
°
C
Pd
UMA9N
150 (TOTAL)
mW
FMA9A
300 (TOTAL)
*
1
*
2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
*
1 120mW per element must not be exceeded.
*
2 200mW per element must not be exceeded.
Power
dissipation
I
C (MAX.)
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
R
1
G
I
R
2
/R
1
Min.
3.0
7
30
0.8
10
1
0.5
0.3
0.1
0.88
0.5
13
1.2
V
V
CC
=
5V, I
O
=
100
μ
A
V
O
=
0.3V, I
O
=
10mA
I
O
/I
I
=
10mA /
0.5mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
I
O
=
5mA, V
O
=
5V
V
mA
μ
A
k
Typ.
Max.
Unit
Conditions
f
T
250
V
CE
=
10mA, I
E
=
5mA, f
=
100MHZ
MHz
*
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
*
Transition frequency of the device
相關(guān)PDF資料
PDF描述
FMB-2206 Schottky Barrier Diodes
FME-2106 Schottky Barrier Diodes
FMBB4148 200 mW EPITAXIAL PLANAR DIODES
FMC1A Power Management(Dual Digital Transistors)(電源管理(雙數(shù)字晶體管))
FMC7A Power Management(Dual Digital Transistors)(電源管理(雙數(shù)字晶體管))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FMA9A 制造商:ROHM 制造商全稱:Rohm 功能描述:Digital transistor (Common Emitter Dual Transistors)
FMA9AT148 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL PNP 50V 50MA SMT5 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
FMA9N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-88A
FMAB 制造商:SCHURTER 制造商全稱:Schurter Inc. 功能描述:AC Filter, Broad Band Attenuation
FMAB-0172-0470 制造商:Schurter Electronic Components 功能描述:FPP 2-0172-0470 - Bulk