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參數(shù)資料
| 型號(hào)： | FMB1020 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package |
| 中文描述： | 500 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | FMB1020 |
FMB1020
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
°C
-55 to +150
Operating and Storage Junction Temperature Range
T
J,
T
STG
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
mA
500
Collector Current
I
C
V
6
Emitter-Base Voltage
V
EBO
V
60
Collector-Base Voltage
V
CBO
V
45
Collector-Emitter Voltage
V
CEO
Units
Value
Parameter
Symbol
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
°C/W
180
Thermal Resistance, Junction to Ambient, total
R
θ
JA
mW
700
350
Total Device Dissipation, total
per side
P
D
Units
Max
Characteristics
Symbol
Thermal Characteristics
T
A = 25°C unless otherwise noted
Page 1 of 2
fmb1020.lwpPr10&68(Y4)
1998 Fairchild Semiconductor Corporation
This dual complementary device was designed for use as a general purpose amplifier applications at
collector currents to 300mA. Sourced from Process 10 (NPN ) and Process 68 (PNP).
F
Discrete Power
&
Signal
Technologies
Package: SuperSOT-6
Device Marking:
.004
Note: The "
.
" (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
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