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參數(shù)資料
| 型號： | FMB150 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(Ic:16 A,Vcbo: 60 V,Vceo: 25 V,Vebo: 4.0 V)(NPN 硅型射頻功率晶體管(Ic:16 A,Vcbo: 60 V,Vceo: 25 V,Vebo: 4.0 V)) |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 18K |
| 代理商： | FMB150 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 100 mA
BV
CER
I
C
= 100 mA R
BE
= 10
BV
CEO
I
C
= 100 mA
BV
EBO
I
E
= 20 mA
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
60
55
25
4.0
20
UNITS
V
V
V
V
---
150
C
OB
V
CB
= 28 V
f = 1.0 MHz
140
pF
P
G
η
C
V
CC
= 28 V
P
OUT
= 150 W f = 108 MHz
9.0
65
dB
%
NPN SILICON RF POWER TRANSISTOR
FMB150
DESCRIPTION:
The
ASI FMB150
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
16 A
60 V
25 V
60 V
4.0 V
230 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
1.1
O
C/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10588
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
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