參數(shù)資料
型號: FMB2227A
廠商: Powertip Technology Corp.
英文描述: NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package
中文描述:
文件頁數(shù): 1/2頁
文件大小: 28K
代理商: FMB2227A
FMB2227A
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
Absolute Maximum Ratings
T
A = 25°C unless otherwise noted
°C/W
180
Thermal Resistance, Junction to Ambient
R
θ
JA
°C
150
Junction Temperature
T
J
°C
-55 to +150
Storage Temperature Range
T
STG
W
0.7
Power Dissipation @Ta = 25°C*
P
D
mA
500
Collector Current
I
C
V
5
Emitter-Base Voltage
V
EBO
V
60
Collector-Base Voltage
V
CBO
V
30
Collector-Emitter Voltage
V
CEO
Units
Value
Parameter
Symbol
Electrical Characteristics
T
A = 25°C unless otherwise noted
V
5
Ie = 10 uA
Emitter to Base Voltage
BV
EBO
V
60
Ic = 10 uA
Collector to Base Voltage
BV
CBO
V
30
Ic = 10 mA
Collector to Emitter Voltage
BV
CEO
Units
Max
Min
Test Conditions
Parameter
Symbol
Page 1 of 2
1998 Fairchild Semiconductor Corporation
2227A.lwpPr19&63(Y1)
Package: SuperSOT-6
Device Marking:
.001
Note: The "
.
" (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
This complementary dual device was designed for use as a medium power amplifier and switch requiring
collector currents up to 300mA. Sourced from Pr19 (NPN) and Pr63 (PNP).
Discrete Power
&
Signal
Technologies
F
C2
E1
C1
B2
E2
B1
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