參數(shù)資料
型號(hào): FMB2907A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: PNP Multi-Chip General Purpose Amplifier(PNP多片通用放大器)
中文描述: 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SUPERSOT-6
文件頁數(shù): 1/5頁
文件大?。?/td> 62K
代理商: FMB2907A
F
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
60
60
5.0
600
V
V
V
mA
°
C
-55 to +150
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Discrete POWE R & Signal
Technologies
1998 Fairchild Semiconductor Corporation
PNP Multi-Chip General Purpose Amplifier
Thermal Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FFB2907A
300
2.4
415
FMB2907A
700
5.6
180
MMPQ2907A
1,000
8.0
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
mW
mW/
°
C
°
C/W
°
C/W
°
C/W
R
θ
JA
125
240
FFB2907A
SC70-6
Mark: .2F
C1
B2
E2
E1
B1
C2
pin #1
FMB2907A
SuperSOT
-6
Mark: .2F
C1
E1
C2
B1
E2
B2
pin #1
MMPQ2907A
SOIC-16
C1C1C2C2C3C3C4C4
E1
B1E2B2E3B3E4B4
This device is designed for use as a general purpose amplifier and switch requiring
collector currents to 500 mA. Sourced from Process 63.
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