參數(shù)資料
型號(hào): FMB3946
廠(chǎng)商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package
中文描述: 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SUPERSOT-6
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 30K
代理商: FMB3946
FMB3946
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
°C
-55 to +150
Operating and Storage Junction Temperature Range
T
J,
T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
mA
200
Collector Current
I
C
V
5
Emitter-Base Voltage
V
EBO
V
40
Collector-Base Voltage
V
CBO
V
40
Collector-Emitter Voltage
V
CEO
Units
Value
Parameter
Symbol
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
°C/W
180
Thermal Resistance, Junction to Ambient
R
θ
JA
mW
mW/°C
700
5.6
Total Device Dissipation
Derate above 25°C
P
D
Units
Max
Characteristics
Symbol
Thermal Characteristics
T
A = 25°C unless otherwise noted
Page 1 of 2
fmb3946.lwpPr23&66(Y2)
1997 Fairchild Semiconductor Corporation
Package: SuperSOT-6
Device Marking:
.002
Note: The "
.
" (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
This complementary dual device was designed for use as a general purpose amplifier and switch. The useful
dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Sourced from Process 23
(NPN) and Process 66 (PNP).
F
Discrete Power
&
Signal
Technologies
C2
E1
C1
B2
E2
B1
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