- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375858 > FMB3946 (FAIRCHILD SEMICONDUCTOR CORP) NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package PDF資料下載
參數(shù)資料
| 型號： | FMB3946 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 30K |
| 代理商： | FMB3946 |
V
0.9
Ic = 10mA, Ib = 1mA
Base-Emitter Saturation Voltage
V
BE(sat)
V
0.25
Ic = 10mA, Ib = 1mA
Collector-Emitter Saturation Voltage
V
CE(sat)
-
40
70
100
60
30
Vce = 1V, Ic = 100uA
Vce = 1V, Ic = 1.0mA
Vce = 1V, Ic = 10mA
Vce = 1V, Ic = 50mA
Vce = 1V, Ic = 100mA
DC Current Gain
h
FE
ON CHARACTERISTICS
nA
50
Veb = 4.0 V
Emitter Cutoff Current
I
EBO
nA
50
Vcb = 30 V
Collector Cutoff Current
I
CBO
V
5
Ie = 10 uA
Emitter to Base Voltage
BV
EBO
V
40
Ic = 10 uA
Collector to Base Voltage
BV
CBO
V
40
Ic = 1.0 mA
Collector to Emitter Voltage
BV
CEO
OFF CHARACTERISTICS
Units
Max
Min
Test Conditions
Parameter
Symbol
Electrical Characteristics
T
A = 25°C unless otherwise noted
NPN & PNP Complementary Dual Transistor
(continued)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
OB
TYP
ns
40
Fall Time
t
f
ns
150
Vcc = 3V,Ic = 10 mA,
Ib1 = Ib2 = 1 mA
Storage Time
t
s
ns
20
Rise Time
t
r
ns
18
Vcc = 3V, Vbe = 0.5V,
Ic = 10 mA, Ib1 = 1 mA
Delay Time
t
d
SWITCHING CHARACTERISTICS
TYP
dB
2.5
Vce = 5V, Ic = 100uA,
Rs = 1kohms, f = 10Hz to 15.7kHz
Noise Figure
NF
MHz
450
Vce = 20V, Ic = 10mA, f = 100MHz
Current Gain - Bandwidth Product
f
T
pF
7
Veb = 0.5V, f = 1MHz
Input Capacitance
C
IB
pF
3
Vcb = 5V, f = 1MHz
Page 2 of 2
fmb3946.lwpPr23&66(Y2)
1997 Fairchild Semiconductor Corporation
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FMB5551 | NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package |
| FMBA0656 | NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package |
| FMBA06 | NPN Multi-Chip General Purpose Amplifier |
| FMBA14 | NPN Multi-Chip Darlington Transistor |
| FMBA56 | PNP Multi-Chip General Purpose Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMB3946_Q | 功能描述:兩極晶體管 - BJT NPN & PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMB-39M | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Schottky Barrier Diodes 90V |
| FMB45DYFD | 制造商:Sullins Connector Solutions 功能描述:CONN CARDEDGE DL 90POS .050 SMD |
| FMB45DYFN | 制造商:Sullins Connector Solutions 功能描述:CONN CARDEDGE DL 90POS .050 SMD |
| FMB45DYFR | 制造商:Sullins Connector Solutions 功能描述:CONN CARDEDGE DL 90POS .050 SMD |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。