參數(shù)資料
型號: FMBA14
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: NPN Multi-Chip Darlington Transistor
中文描述: 1200 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SUPERSOT-6
文件頁數(shù): 2/3頁
文件大?。?/td> 48K
代理商: FMBA14
F
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
CBO
Collector-Cutoff Current
I
EBO
Emitter-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
I
C
= 100
μ
A, I
B
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
30
V
nA
nA
100
100
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 100 mA, I
B
= 0.1 mA
I
C
= 100 mA, V
CE
= 5.0 V
10K
20K
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
1.5
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
*
Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
200
MHz
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
1
0
50
100
150
200
250
I - COLLECTOR CURRENT (A)
h
F
25 °C
125 °C
- 40 °C
V = 5V
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRENT (mA)
V
C
25°C
- 40 oC
125 oC
β
= 1000
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
B
25 °C
- 40 oC
125 oC
β
= 1000
Base Emitter ON Voltage vs
Collector Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
B
V = 5V
- 40 oC
25 °C
125 oC
NPN Multi-Chip Darlington Transistor
(continued)
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