參數(shù)資料
型號(hào)： FMC6G30US60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： IGBT 晶體管
英文描述： Function Generator; Bandwidth Max:120MHz; Amplitude Accuracy :0.01dB; Frequency Max:120MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
中文描述： 30 A, 600 V, N-CHANNEL IGBT
封裝： 21PM-BA, 21 PIN
文件頁(yè)數(shù)： 5/9頁(yè)
文件大?。?/td> 713K
代理商： FMC6G30US60
2000 Fairchild Semiconductor International
FMC6G30US60 Rev. A
F
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
15
30
45
60
100
1000
Tf
Toff
Toff
Tf
Common Emitter
V
GE
=
±
15V, R
G
= 7
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
1
10
0
500
1000
1500
2000
2500
3000
3500
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
C
Collector - Emitter Voltage, V
CE
[V]
1
10
100
10
100
1000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 30A
T
C
= 25
℃
━━
T
C
= 125
℃
------
Ton
Tr
S
Gate Resistance, R
G
[
]
1
10
100
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 30A
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Gate Resistance, R
G
[
]
1
10
100
100
1000
10000
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 30A
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Gate Resistance, R
G
[
]
15
30
45
60
10
100
1000
Ton
Tr
Common Emitter
V
GE
=
±
15V, R
G
= 7
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
相關(guān)PDF資料
PDF描述
FMC6G50US60 Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency
FMC7G15US60 Compact & Complex Module
FMC7G20US60 Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
FMC7G30US60 Arbitrary/Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
FMC7G50US60 Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FMC6G50US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMC700 制造商:Black Box Corporation 功能描述:CAT 7 OUTLET 4 PORT JACK
FMC78A2200006 功能描述:搖臂開(kāi)關(guān)與扳鈕開(kāi)關(guān) SPDT 6A 250V Mom-Off-MomBlack RoHS:否 制造商:C&K Components 觸點(diǎn)形式: 開(kāi)關(guān)功能: 電流額定值:50 mA 電壓額定值 AC: 電壓額定值 DC:30 V 功率額定值: 端接類(lèi)型: 執(zhí)行器:Paddle 顏色: 安裝風(fēng)格:Panel 端子密封: 觸點(diǎn)電鍍: 照明:Not Illuminated 照明顏色:
FMC7A 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-25
FMC7G10US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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