參數(shù)資料
型號: FMC6G30US60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Function Generator; Bandwidth Max:120MHz; Amplitude Accuracy :0.01dB; Frequency Max:120MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
中文描述: 30 A, 600 V, N-CHANNEL IGBT
封裝: 21PM-BA, 21 PIN
文件頁數(shù): 8/9頁
文件大小: 713K
代理商: FMC6G30US60
2000 Fairchild Semiconductor International
FMC6G30US60 Rev. A
F
Package Dimension
Dimensions in Millimeters
W
V
U
B
T
S
R
E
-GW
-GV
-GU
GB
EW
EV
EU
GW
GV
GU
N
P1
P
NAME PLATE
2-
4.5
Mounting
Hole
10-4.0*0.6t
11-0.7*0.6t
15.0
5.0
115.0
1
6
1
2
6
8.0
5
48.26(2.54*19)
17.2
15.0
15.0
3*10.16
2.5
3
17.0
12.5
12.5
15.0
12.5
12.5
8.0
21PM-BB (FS PKG CODE BK)
相關(guān)PDF資料
PDF描述
FMC6G50US60 Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency
FMC7G15US60 Compact & Complex Module
FMC7G20US60 Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
FMC7G30US60 Arbitrary/Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
FMC7G50US60 Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FMC6G50US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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FMC7G10US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: