- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375878 > FQB17N08 (FAIRCHILD SEMICONDUCTOR CORP) GIGATRUE 550 CAT6 PATCH 25 FT, NON BOOT, WHITE PDF資料下載
參數(shù)資料
| 型號： | FQB17N08 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | GIGATRUE 550 CAT6 PATCH 25 FT, NON BOOT, WHITE |
| 中文描述： | 16.5 A, 80 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 614K |
| 代理商： | FQB17N08 |
QFET
TM
2000 Fairchild Semiconductor International
January 2001
Rev. A1, January 2001
F
FQB17N08 / FQI17N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
high efficiency switching for DC/DC converters, and DC
motor control.
Features
16.5A, 80V, R
DS(on)
= 0.115
@V
GS
= 10 V
Low gate charge ( typical 12 nC)
Low Crss ( typical 28 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
! "
!
!
S
!
"
"
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB17N08 / FQI17N08
80
16.5
11.6
66
±
25
100
16.5
6.5
6.5
3.13
65
0.43
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
2.31
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQB17P10 | 100V P-Channel MOSFET |
| FQB17P06 | GIGATRUE 550 CAT6 PATCH 10 FT, SNAGLESS, GRAY |
| FQB19N20C | 200V N-Channel MOSFET |
| FQI19N20C | 200V N-Channel MOSFET |
| FQB19N20L | 200V Logic N-Channel MOSFET(漏源電壓為200V的邏輯N溝道增強型MOS場效應管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQB17N08L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:80V LOGIC N-Channel MOSFET |
| FQB17N08LTM | 功能描述:MOSFET 80V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB17N08TM | 功能描述:MOSFET 80V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB17N40TM | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB17P06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。