參數(shù)資料
型號： FQI19N20C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 200V N-Channel MOSFET
中文描述： 19 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： I2PAK-3
文件頁數(shù)： 1/9頁
文件大?。?/td> 876K
代理商： FQI19N20C
2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
F
QFET
FQB19N20C/FQI19N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
19.0A, 200V, R
DS(on)
= 0.17
@V
GS
= 10 V
Low gate charge ( typical 40.5 nC)
Low Crss ( typical 85 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
Symbol
V
DSS
I
D
Parameter
FQB19N20C / FQI19N20C
200
19.0
12.1
76.0
±
30
433
19.0
13.9
5.5
3.13
139
1.11
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P
D
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
0.9
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
●
●
●
▲
{
S
{
{
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
FQB19N20L 200V Logic N-Channel MOSFET(漏源電壓為200V的邏輯N溝道增強型MOS場效應管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQI19N20CTU 功能描述:MOSFET N-CH/200V/19A/QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI19N20L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V LOGIC N_Channel MOSFET
FQI19N20LTU 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI19N20TU 功能描述:MOSFET 200V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI1N60 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
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