參數(shù)資料
型號： FQB27P06
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Inductor; Inductor Type:Standard; Inductance:146uH; Series:CMS; DC Resistance Max:0.017ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:3.4A; Leaded Process Compatible:Yes; Leakage Inductance:1.3uH RoHS Compliant: Yes
中文描述： 27 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, D2PAK-3
文件頁數(shù)： 1/9頁
文件大?。?/td> 700K
代理商： FQB27P06
May 2001
QF E T
TM
F
2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
FQB27P06 / FQI27P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
-27A, -60V, R
DS(on)
= 0.07
@V
GS
= -10 V
Low gate charge ( typical 33 nC)
Low Crss ( typical 120 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB27P06 / FQI27P06
-60
-27
-19.1
-108
±
25
560
-27
12
-7.0
3.75
120
0.8
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
1.25
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
●
●
▲
!
!
!
D
!
!
!
●
S
G
相關(guān)PDF資料
PDF描述
FQI27P06 Inductor; Inductor Type:Standard; Inductance:350uH; Series:CMS; DC Resistance Max:0.04ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2A; Leaded Process Compatible:Yes; Leakage Inductance:3uH RoHS Compliant: Yes
FQB33N10L 100V LOGIC N-Channel MOSFET
FQI33N10L 100V LOGIC N-Channel MOSFET
FQB34N20L 200V LOGIC N-Channel MOSFET
FQI34N20L LED 5MM QUAD SUP CLR GREEN PCMNT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQB27P06TM 功能描述:MOSFET 60V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB27P06TM 制造商:Fairchild Semiconductor Corporation 功能描述:P-CH/60V/27A/0.07OHM :ROHS COMPLIANT
FQB28N15 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET
FQB2N30 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:300V N-Channel MOSFET
FQB2N30TM 功能描述:MOSFET N-CH/300V/2.1A/3.7OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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