參數(shù)資料
型號： FQB27P06
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Inductor; Inductor Type:Standard; Inductance:146uH; Series:CMS; DC Resistance Max:0.017ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:3.4A; Leaded Process Compatible:Yes; Leakage Inductance:1.3uH RoHS Compliant: Yes
中文描述： 27 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, D2PAK-3
文件頁數(shù)： 2/9頁
文件大?。?/td> 700K
代理商： FQB27P06
F
Rev. A2. May 2001
2001 Fairchild Semiconductor Corporation
Elerical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, I
= -27A, V
DD
= -25V, R
= 25
,
Starting T
= 25°C
3. I
≤
-27A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250
μ
A
-60
--
--
V
Breakdown Voltage Temperature
I
D
= -250
μ
A, Referenced to 25°C
--
-0.06
--
V/°C
V
DS
= -60 V, V
GS
= 0 V
V
DS
= -48 V, T
C
= 150°C
V
GS
= -25 V, V
DS
= 0 V
V
GS
= 25 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
-1
-10
-100
100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
μ
A
-2.0
--
-4.0
V
V
GS
= -10 V, I
D
= -13.5 A
--
0.055
0.07
V
DS
= -30 V, I
D
= -13.5 A
--
12.4
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1100
510
120
1400
660
155
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= -30 V, I
D
= -13.5 A,
R
G
= 25
--
--
--
--
--
--
--
18
185
30
90
33
6.8
18
45
380
70
190
43
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= -48 V, I
D
= -27 A,
V
GS
= -10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
-27
-108
-4.0
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= -27 A
V
GS
= 0 V, I
S
= -27 A,
dI
F
/ dt = 100 A/
μ
s
105
0.41
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQB27P06TM 功能描述:MOSFET 60V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB27P06TM 制造商:Fairchild Semiconductor Corporation 功能描述:P-CH/60V/27A/0.07OHM :ROHS COMPLIANT
FQB28N15 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET
FQB2N30 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:300V N-Channel MOSFET
FQB2N30TM 功能描述:MOSFET N-CH/300V/2.1A/3.7OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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