參數(shù)資料
型號(hào)： FQB4P25
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 250V P-Channel MOSFET(漏源電壓為-250V的P溝道增強(qiáng)型MOSFET)
中文描述： 4 A, 250 V, 2.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263
封裝： D2PAK-3
文件頁(yè)數(shù)： 1/9頁(yè)
文件大小： 639K
代理商： FQB4P25
2000 Fairchild Semiconductor International
May 2000
Rev. A, May 2000
F
QFET
TM
FQB4P25 / FQI4P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Features
-4.0A, -250V, R
DS(on)
= 2.1
@V
GS
= -10 V
Low gate charge ( typical 10 nC)
Low Crss ( typical 10.3 pF)
Fast switching
100% avalanche tested
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB4P25 / FQI4P25
-250
-4.0
-2.53
-16
±
30
280
-4.0
7.5
-5.5
3.13
75
0.6
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
1.67
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
●
●
●
●
▲
!
!
D
!
!
!
●
●
S
G
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參數(shù)描述
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FQB4P40 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V P-Channel MOSFET
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FQB50N06 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D2-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D2-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:50 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:60V, On Resistance Rds(on):22mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Pd:120W , RoHS Compliant: Yes
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