參數(shù)資料
型號: FQB4P25
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 250V P-Channel MOSFET(漏源電壓為-250V的P溝道增強型MOSFET)
中文描述: 4 A, 250 V, 2.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263
封裝: D2PAK-3
文件頁數(shù): 6/9頁
文件大小: 639K
代理商: FQB4P25
2000 Fairchild Semiconductor International
F
Rev. A, May 2000
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
(N-Channel)
V
GS
I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Period
-Gate Pulse Width
-Gate Pulse Width
Compliment of DUT
dv/dt controlled by R
G
Body Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FQB4P40 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V P-Channel MOSFET
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FQB50N06 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D2-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D2-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:50 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:60V, On Resistance Rds(on):22mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Pd:120W , RoHS Compliant: Yes
FQB50N06L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V LOGIC N-Channel MOSFET