參數(shù)資料
型號(hào)： FQB7N60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 600V N-Channel MOSFET
中文描述： 7.4 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
封裝： D2PAK-3
文件頁數(shù)： 1/9頁
文件大小： 591K
代理商： FQB7N60
2000 Fairchild Semiconductor International
April 2000
Rev. A, April 2000
F
QFET
TM
FQB7N60 / FQI7N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
7.4A, 600V, R
DS(on)
= 1.0
@V
GS
= 10 V
Low gate charge ( typical 29 nC)
Low Crss ( typical 16 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
! "
!
!
S
!
"
"
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB7N60 / FQI7N60
600
7.4
4.7
29.6
±
30
580
7.4
14.2
4.5
3.13
142
1.14
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
0.88
40
62.5
Units
°C W
°C W
°C W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
FQI7N60 600V N-Channel MOSFET
FQB7N80 800V N-Channel MOSFET
FQI7N80 800V N-Channel MOSFET
FQB7P20 200V P-Channel MOSFET
FQI7P20 200V P-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQB7N60TM 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB7N60TM_WS 功能描述:MOSFET 600V 7.4A 1Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB7N60TMWS 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel QFET?? MOSFET 800 V, 3.9 A, 3.6 ??
FQB7N65C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:650V N-Channel MOSFET
FQB7N65CTM 功能描述:MOSFET 650V 7A NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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