參數(shù)資料
型號(hào)： FQD13N10L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 100V LOGIC N-Channel MOSFET
中文描述： 10 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： ROHS COMPLIANT, DPAK-3
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 548K
代理商： FQD13N10L
2000 Fairchild Semiconductor International
December 2000
Rev. A4, December 2000
F
QFET
TM
FQD13N10L / FQU13N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as high
efficiency switching DC/DC converters, and DC motor
control.
superior
switching
Features
10A, 100V, R
DS(on)
= 0.18
@V
GS
= 10 V
Low gate charge ( typical 8.7 nC)
Low Crss ( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQD13N10L / FQU13N10L
100
10
6.3
40
±
20
95
10
4.0
6.0
2.5
40
0.32
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
”
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
3.13
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
! "
!
!
S
!
"
"
D
G
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
相關(guān)PDF資料
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FQU13N10L 100V LOGIC N-Channel MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQD13N10LTF 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD13N10LTM 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD13N10LTM_NBEL001 功能描述:MOSFET 100V NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD13N10LTMNBEL001 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R
FQD13N10TF 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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