參數(shù)資料
型號(hào)： FQI1N60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 600V N-Channel MOSFET
中文描述： 1.2 A, 600 V, 11.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
封裝： I2PAK-3
文件頁數(shù)： 1/9頁
文件大小： 545K
代理商： FQI1N60
2000 Fairchild Semiconductor International
April 2000
Rev. A, April 2000
F
QFET
TM
FQB1N60 / FQI1N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
1.2A, 600V, R
DS(on)
= 11.5
@V
GS
= 10 V
Low gate charge ( typical 5.0 nC)
Low Crss ( typical 3.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
! "
!
!
S
!
"
"
"
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB1N60 / FQI1N60
600
1.2
0.76
4.8
±
30
50
1.2
4.0
4.5
3.13
40
0.32
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
3.13
40
62.5
Units
°C W
°C W
°C W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
FQB1N60 600V N-Channel MOSFET(漏源電壓為600V的N溝道增強(qiáng)型MOS場效應(yīng)管)
FQI1P50 500V P-Channel MOSFET
FQI20N06L 60V LOGIC N-Channel MOSFET
FQB20N06L 60V LOGIC N-Channel MOSFET
FQI20N06 60V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQI1P50 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V P-Channel MOSFET
FQI1P50TU 功能描述:MOSFET 500V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI20N06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel MOSFET
FQI20N06L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V LOGIC N-Channel MOSFET
FQI22N30 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 21A I(D) | TO-263
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