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參數(shù)資料
| 型號(hào)： | FQI1N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 1.2 A, 600 V, 11.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 封裝： | I2PAK-3 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 545K |
| 代理商： | FQI1N60 |
2000 Fairchild Semiconductor International
F
Rev. A, April 2000
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-1
1 0
0
N ote s :
1. Z
2. D u ty F actor, D =t
1
/t
2
3. T
J M
- T
C
= P
D M
* Z
J C
(t) = 3.13
/W M ax.
J C
(t)
sing le pu lse
D = 0.5
0 .02
0 .01
0 .2
0 .05
0 .1
Z
J
(
t
1
, S q u a re W a ve P u ls e D u ra tio n [s e c ]
25
50
75
100
125
150
0.0
0.3
0.6
0.9
1.2
I
D
,
T
C
, Case Temperature [ ]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
= 10 V
2. I
D
= 0.6 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
= 0 V
2. I
D
= 250 A
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQB1N60 | 600V N-Channel MOSFET(漏源電壓為600V的N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管) |
| FQI1P50 | 500V P-Channel MOSFET |
| FQI20N06L | 60V LOGIC N-Channel MOSFET |
| FQB20N06L | 60V LOGIC N-Channel MOSFET |
| FQI20N06 | 60V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQI1P50 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V P-Channel MOSFET |
| FQI1P50TU | 功能描述:MOSFET 500V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI20N06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel MOSFET |
| FQI20N06L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V LOGIC N-Channel MOSFET |
| FQI22N30 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 21A I(D) | TO-263 |
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