型號(hào): | FQI27N25 |
廠商: | FAIRCHILD SEMICONDUCTOR CORP |
元件分類: | JFETs |
英文描述: | 250V N-Channel MOSFET(漏源電壓為250V的N溝道增強(qiáng)型MOS場效應(yīng)管) |
中文描述: | 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
封裝: | I2PAK-3 |
文件頁數(shù): | 1/9頁 |
文件大小: | 784K |
代理商: | FQI27N25 |
相關(guān)PDF資料 |
PDF描述 |
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FQB27P06 | Inductor; Inductor Type:Standard; Inductance:146uH; Series:CMS; DC Resistance Max:0.017ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:3.4A; Leaded Process Compatible:Yes; Leakage Inductance:1.3uH RoHS Compliant: Yes |
FQI27P06 | Inductor; Inductor Type:Standard; Inductance:350uH; Series:CMS; DC Resistance Max:0.04ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2A; Leaded Process Compatible:Yes; Leakage Inductance:3uH RoHS Compliant: Yes |
FQB33N10L | 100V LOGIC N-Channel MOSFET |
FQI33N10L | 100V LOGIC N-Channel MOSFET |
FQB34N20L | 200V LOGIC N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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FQI27N25TU | 功能描述:MOSFET 250V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
FQI27N25TU_F085 | 功能描述:MOSFET 250V 0.11OHM 25.5A N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
FQI27P06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel MOSFET |
FQI27P06TU | 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
FQI28N15 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET |