- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375885 > FQI30N06 (FAIRCHILD SEMICONDUCTOR CORP) 60V N-Channel MOSFET(漏源電壓為60V的N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | FQI30N06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 60V N-Channel MOSFET(漏源電壓為60V的N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 30 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 封裝： | I2PAK-3 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 600K |
| 代理商： | FQI30N06 |
2000 Fairchild Semiconductor International
April 2000
Rev. A, April 2000
F
QFET
TM
FQB30N06 / FQI30N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
30A, 60V, R
DS(on)
= 0.04
@V
GS
= 10 V
Low gate charge ( typical 19 nC)
Low Crss ( typical 40 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
! "
!
!
S
!
"
"
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB30N06 / FQI30N06
60
30
21.3
120
±
25
280
30
7.9
7.0
3.75
79
0.53
-55 to +175
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
1.90
40
62.5
Units
°C W
°C W
°C W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQB30N06 | 60V N-Channel MOSFET(漏源電壓為60V的N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管) |
| FQI32N12V2 | 120V N-Channel MOSFET |
| FQB32N12V2 | 120V N-Channel MOSFET |
| FQI32N20C | 200V N-Channel MOSFET |
| FQB32N20C | 200V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQI30N06L | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 32A I(D) | TO-262AA |
| FQI30N06LTU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI32N12V2 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:120V N-Channel MOSFET |
| FQI32N12V2TU | 功能描述:MOSFET 120V N-Ch Adv QFET V2 series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI32N20C | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。