參數(shù)資料
型號: FQL40N50
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: CAP 0.1UF 50V 20% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
中文描述: 40 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 623K
代理商: FQL40N50
F
2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
0
30
60
90
120
150
180
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 400V
V
DS
= 100V
Note : I
D
= 40 A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
2000
4000
6000
8000
10000
12000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
-1
10
0
10
1
10
2
25
150
Notes :
1. V
GS
= 0 V
2. 250
μ
s Pulse Test
I
D
V
SD
, Source-Drain Voltage [V]
0
30
60
I
D
, Drain Current [A]
90
120
150
180
0.1
0.2
0.3
0.4
Note : T
J
= 25
V
GS
= 20V
V
GS
= 10V
R
D
]
D
2
4
6
8
10
10
-1
10
0
10
1
10
2
Notes :
1. V
DS
= 50V
2. 250
μ
s Pulse Test
-55
150
25
I
D
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
10
2
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
GS
V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
I
D
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
相關(guān)PDF資料
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FQL50N40 CAP 1200PF 100V 5% NP0(C0G) DIP-2 TUBE-PAK S-MIL-PRF-39014/22
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