參數(shù)資料
型號(hào)： FQP10N50CF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 500V N-Channel MOSFET
中文描述： 10 A, 500 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 996K
代理商： FQP10N50CF
2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. A
1
www.fairchildsemi.com
F
December 2006
FRFET
TM
F
QP10N50CF / FQPF10N50CF
500V N-Channel MOSFET
Features
10A, 500V, R
DS(on)
= 0.61
@V
GS
= 10 V
Low gate charge (typical 43 nC)
Low Crss (typical 16pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
TO-220
FQP Series
G
S
D
D
G
S
TO-220F
FQPF Series
G
S
D
Symbol
Parameter
FQP10N50CF
FQPF10N50CF
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
10
10*
A
6.35
6.35*
A
I
DM
Drain Current
- Pulsed
(Note 1)
40
40*
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
388
mJ
Avalanche Current
(Note 1)
10
A
Repetitive Avalanche Energy
(Note 1)
14.3
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
143
48
W
- Derate above 25
°
C
1.14
0.38
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
FQP10N50CF
FQPF10N50CF
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
0.87
2.58
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQP10N50CF_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET Improved dv/dt capability
FQP10N60 制造商:TGS 制造商全稱:Tiger Electronic Co.,Ltd 功能描述:600V N-Channel MOSFET
FQP10N60C 功能描述:MOSFET 600V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP10N60C_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
FQP10N60C_Q 功能描述:MOSFET 600V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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