參數(shù)資料
型號: FQP1N60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: QFET N-CHANNEL
中文描述: 1.2 A, 600 V, 11.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 519K
代理商: FQP1N60
FQP1N60
QFET N-CHANNEL
4
DM
P
DM
t
1
2
t
2
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case Temperature
Fig 9. Max. Safe Operating Area
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Note :
1. V
GS
= 0 V
2. I
D
= 250 ¥ìA
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Note :
1. V
= 10 V
2. I
D
= 0.6 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
0.3
0.6
0.9
I
D
,
T
C
, Case Temperature [é]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-1
1 0
0
N otes :
1. Z
(t) = 3.13 é /W M ax .
2. D uty F a ctor, D = t
1
/t
2
3. T
JM
- T
C
= P
D M
* Z
¥èJC
(t)
sing le pu lse
D =0 .5
0 .0 2
0 .0 1
0 .2
0 .0 5
0 .1
Z
(
t
1
, S q ua re W a ve P u ls e D u ra tio n [s ec ]
C]
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