參數(shù)資料
型號： FQPF3N50C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 500V N-Channel MOSFET
中文描述： 3 A, 500 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁數(shù)： 1/10頁
文件大小： 1269K
代理商： FQPF3N50C
2005 Fairchild Semiconductor Corporation
FQP3N50C/FQPF3N50C Rev. A
1
www.fairchildsemi.com
F
QFET
FQP3N50C/FQPF3N50C
500V N-Channel MOSFET
Features
3 A, 500 V, R
DS(on)
= 2.5
@ V
GS
= 10 V
Low gate charge ( typical 10 nC )
Low Crss ( typical 8.5 pF)
Fast switching
100 % avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
●
●
●
●
▲
{
{
S
{
{
{
{
D
G
Symbol
Parameter
FQP3N50C
FQPF3N50C
Units
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25°C)
3
3 *
A
- Continuous (T
C
= 100°C)
1.8
1.8 *
A
I
DM
Drain Current
- Pulsed
(Note 1)
12
12 *
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
200
mJ
Avalanche Current
(Note 1)
3
A
Repetitive Avalanche Energy
(Note 1)
6.2
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25°C)
62
25
W
- Derate above 25°C
0.5
0.2
W/°C
T
J
, T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°C
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
°C
Symbol
Parameter
FQP3N50C
FQPF3N50C
Units
R
θ
JC
R
θ
JS
R
θ
JA
Thermal Resistance, Junction-to-Case
2.0
4.9
°C
/
W
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C
/
W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C
/
W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQPF3N60 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF3N80 功能描述:MOSFET 800V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF3N80C 功能描述:MOSFET 800V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF3N80CYDTU 功能描述:MOSFET N-CH/800V/3A/C-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF3N90 功能描述:MOSFET 900V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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